Komponente

oshiba MG10ADA600E je trdi disk iz serije MG10-D, zasnovan za uporabo v podatkovnih centrih, strežniških sistemih in profesionalnih shranjevalnih okoljih. Disk uporablja CMR tehnologijo zapisa in je optimiziran za stabilno delovanje v sistemih z več

Odporen Samsung T7 Shield je opremljen z IP65 za&scaron,čito pred vodo in prahom. Zunanjost je tudi odporna na udarce in padce. Majhen in lahek T7 Shield je izjemno kompakten in lahkek s samo 98 grami in z velikostjo 8,8 cm x 5,9 cm x 1,3 cm prim

Features ECC: No Component for: Laptop Memory layout (modules x size): 2 x 16 GB CAS latency: 18 Memory clock speed: 3000 MHz Internal memory type: DDR4 Memory voltage: 1.2 V Memory form factor: 260-pin SO-DIMM Internal memory: 32 GB Logistics data H

Features Memory clock speed: 2666 MHz ECC: No Memory voltage: 1.2 V CAS latency: 18 Internal memory type: DDR4 Country of origin: China Memory layout (modules x size): 2 x 16 GB Internal memory: 32 GB Component for: Laptop Memory form factor: 260-pin

Model: Kingston FURY Renegade G5 PCIe 5.0 NVMe M.2 SSD Kapacitet: 1 TB Brzina čitanja: 14,200MB/s Brzina pisanja: 11,000MB/s

GIGABYTE GeForce RTX 3050 WINDFORCE OC V2 8GB

Features Embedded options available: No Maximum number of PCI Express lanes: 20 PCI Express slots version: 4.0 PCI Express slots version: 5.0 CPU configuration (max): 1 PCI Express configurations: 1x16+1x4 PCI Express configurations: 2x8+1x4 Thermal

Features Memory clock speed: 2400 MHz Intel Extreme Memory Profile (XMP): Yes Memory layout (modules x size): 2 x 16 GB Internal memory type: DDR4 Memory channels: Dual-channel Buffered memory type: Unregistered (unbuffered) Memory form factor: 288-p

The GIGABYTE X870E AORUS PRO X3D ICE is based on the AMD X870E chipset and supports AMD processors for the AM5 socket. It has four DDR5 slots for up to 256 GB of memory. Other features of the GIGABYTE GIGABYTE X870E AORUS PRO X3D ICE include a PCIe 5

Features JEDEC standard: Yes Intel Extreme Memory Profile (XMP) version: 3.0 Memory data transfer rate: 5200 MT/s Row active time: 32 ns ECC: No Memory voltage: 1.25 V On-Die ECC: Yes Intel Extreme Memory Profile (XMP): Yes Lead plating: Gold Interna